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IRL1104S/L
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max. Units
Conditions
V (BR)DSS
Drain-to-Source Breakdown Voltage
40
–––
––– V V GS = 0V, I D = 250μA
? V (BR)DSS / ? T J Breakdown Voltage Temp. Coefficient
–––
0.04
–––
V/°C Reference to 25°C, I D =1mA ?
V GS = 4.5V, I D = 52A ?
0.012
R DS(on)
V GS(th)
g fs
I DSS
I GSS
Q g
Q gs
Q gd
t d(on)
t r
t d(off)
t f
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
–––
–––
1.0
53
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
18
257
32
64
0.008 V GS = 10V, I D = 62A ?
W
V V DS = V GS , I D = 250μA
––– S V DS = 25V, I D = 62A ?
25 V DS =40V, V GS = 0V
μA
250 V DS = 32V, V GS = 0V, T J = 150°C
100 V GS = 16V
nA
-100 V GS = -16V
68 I D =62A
24 nC V DS = 32V
34 V GS = 4.5V, See Fig. 6 and 13 ??
––– V DD = 20V
––– I D =54A
––– R G = 3.6 ? , V GS = 4.5V
––– R D = 0.4 ? , See Fig. 10 ??
L S
Internal Source Inductance
–––
7.5
–––
nH
Between lead,
and center of die contact
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
3445 ––– V GS = 0V
1065 ––– pF V DS = 25V
270 ––– ? = 1.0MHz, See Fig. 5 ?
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I S
I SM
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) ?
––– ––– 104 ?
––– ––– 416
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
D
S
V SD
t rr
Q rr
t on
Notes:
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
––– ––– 1.3 V T J = 25°C, I S =62A, V GS = 0V ?
––– 84 126 ns T J = 25°C, I F =62A
––– 223 335 nC di/dt = 100A/μs ??
Intrinsic turn-on time is negligible (turn-on is dominated by L S +L D )
? Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
? V DD = 15V, starting T J = 25°C, L = 0.18mH
R G = 25 ? , I AS = 62A. (See Figure 12)
? I SD ≤ 62A, di/dt ≤ 217A/μs, V DD ≤ V (BR)DSS ,
T J ≤ 175°C
? Pulse width ≤ 300μs; duty cycle ≤ 2%.
? Uses IRL1104 data and test conditions.
? Calculated continuous current based on maximum allowable
junction temperature;for recommended current-handling of the
package refer to Design Tip # 93-4
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
2
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